Charge drain coating for electron-optical mems

ABSTRACT

A system and method associated with a charge drain coating are disclosed. The charge drain coating may be applied to surfaces of an electron-optical device to drain electrons that come into contact with the charge drain coating so that the performance of the electron-optical device will not be hindered by electron charge build-up. The charge drain coating may include a doping material that coalesces into clusters that are embedded within a high dielectric insulating material. The charge drain coating may be deposited onto the inner surfaces of lenslets of the electron-optical device.

CROSS REFERENCE TO RELATED APPLICATION

The present application claims priority under 35 U.S.C §119 (e)(1) toU.S. Provisional Patent Application No. 61/754,577 filed on Jan. 20,2013 and entitled “Nanoengineered charge drain coating forelectron-optical MEMS,” which is hereby incorporated by reference.

GOVERNMENT LICENSE RIGHTS

This invention was made with government support under contract numberHR0011-07-9-0007 awarded by the Defense Advanced Research ProjectsAgency. The government has certain rights in the invention.

FIELD

The present disclosure relates to charge draining. In some embodiments,the disclosure relates to a charge drain coating for electron-opticalmicro-electro-mechanical systems (MEMS).

BACKGROUND

Conventional electron-beam (e-beam) lithography systems and methods aretypically associated with low throughput, thereby limiting conventionale-beam lithography systems and methods to low volume productionenvironments or applications. However, new e-beam lithography systemsand methods have been designed to increase the throughput of e-beamlithography. For example, advances in MEMS technology have enabled theuse of electron-optical MEMS devices within an e-beam lithography systemto allow for parallel e-beam lithography. Thus, the use of theelectron-optical MEMS devices is increasing the throughput of e-beamlithography so that such technology may be used in higher volumeproduction environments or applications.

The electron-optical MEMS component may be subject to electrostaticcharging. For example, electrons may become embedded into portions ofthe electron-optical MEMS component and an electron charge may build upon the electron-optical MEMS component. Such a charge build up mayinterfere with the operation of the electron-optical MEMS component.

As such, what is needed are systems and methods to discharge electronsfrom electron-optical MEMS components used in e-beam lithography. Forexample, a charge drain coating may be applied to portions of theelectron-optical MEMS component that are susceptible to electrostaticcharging.

SUMMARY

In some embodiments, a MEMS device may receive an electron beam in anelectron-beam lithography chamber. The MEMS device may include aplurality of lenslets to receive electrons from the electron beam. Insome embodiments, each of the lenslets may be configured to eitherabsorb or reflect at least some of the electrons from the electron beam.The MEMS device may further include a charge drain coating on the innersurfaces (e.g., sidewalls and/or bottom) of each of the lenslets todrain any of the electrons that have become embedded into the chargedrain coating. In some embodiments, the charge drain coating includesinsulating material and at least one doping material embedded within theinsulating material.

In some embodiments, the doping material includes at least onenanocluster.

In some embodiments, the MEMS device may be used for reflective electronbeam lithography (REBL). For example, the MEMS device may be a digitalpattern generator (DPG) with an array of the lenslets. Furthermore, eachof the lenslets may be holes in the substrate of the MEMS device. Eachof the lenslets may be selectively configured to either absorb orreflect at least some of the electrons.

In some embodiments, the charge drain coating may include layers of theinsulating material and layers of the doping material. The doping layersmay include clusters of the doping material.

In some embodiments, the insulating material may have a high dielectricstrength and the doping material may be a metal or an oxide, carbide,nitride, or elemental form of a metal.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 illustrates a diagram of an example electron-optical MEMSenvironment in accordance with some embodiments.

FIG. 2 illustrates a diagram of an example lenslet of anelectron-optical MEMS component in accordance with some embodiments ofthe disclosure.

FIG. 3 illustrates an example of electron charge on a sidewall of thelenslet of the electron-optical MEMS in accordance with someembodiments.

FIG. 4 illustrates an example of a lenslet with a charge drain coatingapplied to the sidewalls in accordance with some embodiments.

FIG. 5 illustrates a diagram of an example structure of the charge draincoating in accordance with some embodiments.

FIG. 6A illustrates a flow diagram of an example method to create ordeposit the charge drain coating in accordance with some embodiments ofthe disclosure.

FIG. 6B illustrates the resistivity over time for an example chargedrain coating in comparison with the resistivity of a homogeneous filmof two oxides in accordance with some embodiments.

FIG. 6C illustrates the resistivity as a function of the precursor ratiofor an example charge drain coating in accordance with some embodiments.

FIG. 6D illustrates a cross sectional view and plan view of an examplecharge drain coating with nanoclusters in accordance with someembodiments.

FIG. 6E illustrates current-voltage (IV) curves associated with anexample charge drain coating in accordance with some embodiments of thedisclosure.

FIG. 6F illustrates IV curves associated with an example charge draincoating at different applied electric fields in accordance with someembodiments.

FIG. 6G illustrates an image from an electron-optical MEMS device coatedwith a homogeneous film of two oxides in comparison with an image fromthe electron-optical MEMS device coated with an example charge draincoating in accordance with some embodiments

FIG. 7A illustrates an example electron-optical MEMS device after theatomic layer deposition process has deposited a charge drain coating inaccordance with some embodiments.

FIG. 7B illustrates an electron-optical MEMS device after portions ofthe charge drain coating have been removed in accordance with someembodiments of the disclosure.

FIG. 8A illustrates an Arrhenius plot of IV data at different appliedelectric fields in accordance with some embodiments.

FIG. 8B illustrates the slope of the curves in the Arrhenius plot anddemonstrates an activation energy of approximately 0.31 eV in accordancewith some embodiments.

DETAILED DESCRIPTION

FIG. 1 illustrates a diagram of an example electron-optical MEMScomponent 100. In general, the electron-optical MEMS component 100includes various features used to operate as an array of electronmirrors. For example, the electron-optical MEMS component 100 may bepart of a reflective electron beam lithography (REBL) process to be usedin high production volume e-beam lithography applications. The featuresof the electron-optical MEMS component 100 may be used to reflect orabsorb portions of the electron beam. As such, the electron-optical MEMScomponent 100 may be used in the transmission of electrons (e.g.,electrons illuminate from the backside and come out the front side of adevice).

As shown in FIG. 1, the electron-optical MEMS component 100 may becomposed of multiple layers of materials. In some embodiments, theelectron-optical (or electro-optical) MEMS component 100 may includedoping layers and insulating layers. For example, the electron-opticalMEMS component 100 may include doping layers 140, 141, 142, 143, and 144and insulating layers 130, 131, 132, and 133. In some embodiments, thedoping layers may be operated as electrodes. For example, the dopinglayers 140 may be considered the bottom electrode, the doping layers141, 142, and 143 may be considered the lower electrode, middleelectrode, and upper electrodes respectively, and the doping layer 144may be considered the top electrode. In some embodiments, the dopinglayers may be constructed of titanium nitride (TiN). The thickness ofthe doping layers may vary. In some embodiments, the bottom electrodeand the top electrode may be larger or thicker than the lower, middle,and upper electrodes. For example, the bottom and top electrodes mayeach be 300 nm thick and the lower, middle, and upper electrodes mayeach be 60 nm thick. The insulating layers 130, 131, 132, and 133 may beconstructed of silicon oxide (e.g., SiO₂). As shown, an insulating layermay be between each of the electrode (or doping) layers. In someembodiments, the insulating layers are dielectric layers. In the same oralternative embodiments, the insulating layers may each be a thicknesslarger than any of the doping layers. For example, the insulating layersmay be between 750 and 900 nm thick.

The electron-optical MEMS component 100 may include various MEMSfeatures. For example, the electron-optical MEMS component 100 mayinclude lenslets (i.e., holes or wells) 110, 120, and 130 that mayoperate as switchable or configurable electron mirrors. For example,each of the lenslets 110, 120, and 130 may be separately configured orswitched to either absorb or reflect a portion of an electron beam. Insome embodiments, the lenslets 110, 120, and 130 may be configured toabsorb or reflect a portion of the electron beam based on the use of theelectrodes (e.g., electrodes 140, 141, 142, 143, and 144). For example,each of the lenslets 110, 120, and 130 may operate as an electron mirrorwith two states (e.g., absorb or reflect). In some embodiments, each ofthe lenslets may be configured to absorb a portion of the electron beamif a positive potential is applied across the lenslet's respectiveelectrodes (i.e., the electron mirror is turned off). Furthermore, eachof the lenslets may be configured to reflect a portion of the electronbeam if a negative potential is applied across the lenslet's respectiveelectrodes (i.e., the electron mirror is turned on).

In some embodiments, the electron-optical MEMS component 100 may be adigital pattern generator (DPG) for the REBL tool as earlier described.As such, the lenslets of the DPG may be used to individually absorb orreflect electrons from the electron beam that enters the lenslet. Thus,the electron-optical MEMS component 100 may be considered atwo-dimensional array of configurable electron mirrors. Although theelectron-optical MEMS component 100 shows three lenslets (e.g., lenslets110, 120, and 130), the electron-optical MEMS component 100 may includeany number of lenslets or other electron-optical MEMS features. Forexample, the electron-optical MEMS component 100 may include a 248×4096two dimensional array of lenslets.

As such, the electron-optical MEMS component may include a plurality oflenslets. Each lenslet may be configured or switched to either reflectelectrons from the electron beam that has entered the lenslet or toabsorb electrons from the electron beam that has entered the lenslet. Insome embodiments, the electron-optical MEMS component may be a DPG usedin a REBL process. The lenslets may be wells or holes in theelectron-optical MEMS component. For example, the electron-optical MEMScomponent may include multiple doping and insulating layers. Thelenslets may be openings in such doping and insulating layers.

FIG. 2 illustrates a diagram of an example lenslet of anelectron-optical MEMS component. In general, the lenslet (e.g., lenslet110, 120, or 130) may be part of an electron-optical MEMS component(e.g., electron-optical MEMS component 100) such as a DPG used in theREBL process.

As shown in FIG. 2, the lenslet may be a hole or a well within theelectron-optical component. As such, the lenslet may include sidewalls210 and 220 that include the doping layers (e.g., doping layers 140,141, 142, 143, and 144) and insulating layers (e.g., insulating layers130, 131, 132, and 133).

FIG. 3 illustrates an example of electron charge on a sidewall of thelenslet of the electron-optical MEMS in accordance with someembodiments. In general, electrons from an electron beam may enter thelenslet (e.g., lenslet 110, 120, or 130) and become embedded into thesidewalls of the lenslet. The buildup of electron charge may interferewith the operation of the lenslet that is part of an electron-opticalMEMS component (e.g., a DPG).

As shown in FIG. 3, electrons from an electron beam that is part of theREBL process may enter the lenslet. In some embodiments, electrons fromthe electron beam may become embedded into parts of the sidewall (e.g.,sidewalls 210 and/or 220) of the lenslet. Such embedding of electronsmay create electrostatic charging and interfere with the intendedoperation of the lenslet (e.g., the configuring of the lenslet to eitherreflect or absorb electrons). For example, electrons 310 may becomeembedded into the portions of the sidewall that include the insulatinglayers (e.g., the SiO₂ dielectric layers).

FIG. 4 illustrates an example of a lenslet with a charge drain coatingapplied to the sidewalls in accordance with some embodiments. Ingeneral, the charge drain coating may be used to drain or discharge theelectrons (e.g., electrons 310) that have become embedded onto thesidewalls (e.g., sidewalls 210 and/or 220) of a lenslet (e.g., lenslets110, 120, and/or 130).

As shown in FIG. 4, a charge drain coating 410 may be applied to theinner surfaces (e.g., sidewalls and bottom) of the lenslet 110. In someembodiments, the charge drain coating 410 may have a resistance that islow enough to drain the charge buildup from electrons, but theresistance of the charge drain coating 410 may not be low enough toresult in a short-circuit of the electrode or doping layers of thelenslet. Moreover, the resistance of the charge drain coating 410 maynot be so low as to affect or change the intended voltages applied tothe various electrodes of the lenslet. Furthermore, the charge draincoating 410 may be applied uniformly to all of the surfaces or surfaceorientations (e.g., the sidewalls) of the lenslets in anelectron-optical MEMS component. Such uniformity of the application ofthe charge drain coating 410 may ensure identical performance of eachlenslet and may further ensure uniform electrostatic fields within eachlenslet.

As such, a charge drain coating may be applied to portions of anelectron-optical MEMS component. In some embodiments, the charge draincoating may be applied to features of a device that is used tomanipulate portions (e.g., emitted electrons) of an electron beam. Forexample, the charge drain coating may be applied to the sidewalls oflenslets of a DPG. The charge drain coating may remove electrostaticcharging that may interfere with the operation of the lenslet (e.g., themanipulation of the portions of the electron beam). Further details withregard to the lenslet with a charge drain coating applied to its innersurfaces are disclosed in U.S. patent application Ser. No. 12/510,049entitled “Well-based dynamic pattern generator” filed on Jul. 27, 2009and issued as U.S. Pat. No. 8,253,119, which is hereby incorporated byreference.

FIG. 5 illustrates a diagram of an example structure of the charge draincoating in accordance with some embodiments. In general, the chargedrain coating (e.g., charge drain coating 410) may be composed of aplurality of layers of materials including a nanocluster-based dopinglayer and insulating layers.

As shown in FIG. 5, the charge drain coating 410 may include a pluralityof layers. In some embodiments, the doping layer may includenanoclusters of a conductive material that is embedded within insulatingmaterial. For example, the conductive material may be a metal oxide andthe insulating layer may be an insulating film with a high dielectricstrength. Examples of the conductive material or layer (e.g., thenanoclusters) may include, but are not limited to, molybdenum (Mo),tungsten (W), titanium (Ti), hafnium (Hf), tantalum (Ta), niobium (Nb),platinum (Pt), palladium (Pd), ruthenium (Ru), and iridium (Ir), andeach of their oxides, carbides, and/or nitrides. References tomolybdenum suboxide (MoO_(3-x)) are discussed below, but one skilled inthe art would appreciate that any other conductive material, such as themetals, oxides, carbides, and nitrides mentioned above, may also be usedin the portions of the discussion below.

In some embodiments, the insulating layers or material may be aninsulator with a high dielectric strength. For example, the insulatormay have a dielectric strength greater than or equal to 25 MV/m.Examples of such insulating layers or material include, but are notlimited to, aluminum oxide (Al₂O₃) and silicon oxide (SiO₂).

As such, in some embodiments, the charge drain coating 410 may be madeof layers of molybdenum suboxide (MoO_(3-x)) nanoclusters embeddedwithin layers of aluminum oxide (Al₂O₃). The charge drain coating 410may be a thin film with a resistivity in the mesoscale (i.e., aresistivity between a semiconducting material and an insulatingmaterial). In some embodiments, such a mesoscale resistivity may bedefined between 10⁴ to 10⁹ ohm-meters. Due to the mesoscale resistivity,the charge drain coating 410 will not heat up and damage an associatedelectron-optical MEMS component (e.g., the lenslet) and will not shortan electrode that is associated with the electron-optical MEMScomponent, as opposed to a conducting or semiconducting coating.Furthermore, in some embodiments, such a charge drain coating includingmolybdenum suboxide nanoclusters embedded within layers of aluminumoxide may exhibit greater long term stability as opposed to conductingor semiconducting coatings. For example, the charge drain coating may besubjected to an electrical field up to 250 MV/m.

Returning to FIG. 5, the charge drain coating 410 may include insulatinglayers 510, 520, 540, and 550 and at least one doping layer 530. In someembodiments, the doping layer 530 may include one or more nanoclusters560. For example, the molybdenum used in the doping layer 530 maycoalesce or form into nanoclusters 560. In some embodiments, themolybdenum-based nanoclusters may be between 1 to 3 nanometers in size.Such coalescing of the molybdenum into the nanoclusters may be due tometal material having a higher surface energy than an oxide material andthus tends to form islands (i.e., nanoclusters) on oxide surfaces.Furthermore, in some embodiments, the thickness of the charge draincoating 410 may range between 20 nm and 100 nm. However, any thicknessmay also be used for the charge drain coating 410. Although the chargedrain coating 410 of FIG. 5 shows four insulating layers (e.g., 510,520, 540, and 550) and one doping layer (e.g., 530), any number ofinsulating layers and doping layers may be used.

As previously disclosed, the charge drain coating 410 may include layersof conductive nanoclusters embedded within insulating layers of highdielectric strength. Since the nanoclusters (e.g., the molybdenum oxide)are conductive and the aluminum oxide insulating layers are high bandgap insulators with deeper oxygen vacancy states (e.g., 2 electron-voltsbelow the conduction band), the conductivity of the charge drain coating410 is due to the conductive nanoclusters donating free electrons to theconduction band of the insulating layers. In some embodiments, theconductive mechanism for the charge drain coating 410 may be aFrenkel-Poole (FP) emission The FP emission mechanism may enable theinsulating material (e.g., the insulating layers of the charge draincoating 410) to conduct electricity and drain electrons as previouslydisclosed. The FP emission mechanism may enable the draining of theelectrons through the insulating layers by the following method. Theelectrons may be generally trapped in localized states and randomthermal fluctuations may give the electron enough energy to be removedfrom the localized state and move to a conduction band (and subsequentlydrained). Under the FP emission mechanism, in a larger electric field,the electron may not require as much thermal energy to get into theconduction band.

As such, the conductive or electrical transport mechanism of the chargedrain coating 410 may be based on the molybdenum-based nanoclusters. Theoxygen vacancies in the molybdenum oxide-based nanoclusters may serve asdopants to the aluminum oxide insulating layers. Furthermore, theinsulating layers may protect the nanoclusters in the doping layers fromoxidation and reduction, maintaining the carrier density in the overallfilm. In some embodiments, the insulating layers may protect thenanoclusters in the doping layer from electrical breakdown (e.g., theoxidation or reduction) because the vacancy states of the insulatinglayer are deeper into the band gap and do not contribute donor carriers.

In some embodiments, the charge drain coating 410 may be tuned forresistivity (e.g., between 10⁴ to 10⁹ ohm-meters). The resistivity ofthe charge drain coating 410 may be based on the doping layers andinsulating layers. For example, the resistivity of the charge draincoating 410 may be based on the ratio between the number of dopinglayers to the number of insulating layers. Thus, the electrical andphysical characteristics of the charge drain coating 410 may be changedbased on the number or proportions of doping and insulating layers. Theproportions of the doping layers and the insulating layers may becontrolled by alternating or varying the layers between the dopinglayers and insulating layers when the charge drain coating 410 isdeposited (e.g., upon the lenslets of the electron-optical MEMScomponent).

As such, the charge drain coating 410 may be a high dielectric strengthand high resistivity material (e.g., an insulator) that encapsulatesanother material with a low resistivity (e.g., doping nanoclusters). Thelower resistivity encapsulated material may donate carriers to theencapsulating material, thereby lowering the resistivity of theencapsulating material. Additional details with regard to the chargedrain coating in general are disclosed in U.S. patent application Ser.No. 13/011,645 entitled “Microchannel plate detector and methods fortheir fabrication” filed on Jan. 21, 2011, U.S. patent application Ser.No. 13/525,067 entitled “Tunable Resistance Coatings” and filed on Jun.15, 2012, and U.S. patent application Ser. No. 13/804,660 entitled“Tunable Resistance Coatings” and filed on Mar. 14, 2013, all of whichare hereby incorporated by reference.

FIG. 6 illustrates a flow diagram of a method 600 to create the chargedrain coating. In general, the method 600 may deposit a charge draincoating (e.g., charge drain coating 410) on the sidewalls (e.g.,sidewalls 210 and 220) of a lenslet (e.g., lenslet 110, 120, and/or 130)of an electron-optical MEMS component (e.g., electron-optical MEMScomponent 100).

In some embodiments, the charge drain coating may be deposited by anatomic layer deposition (ALD) process. The atomic layer depositionprocess may be based on the sequential use of a gas phase chemicalprocess. For example, the atomic layer deposition process to deposit thecharge drain coating may use at least two chemicals. Such chemicals maybe referred to as precursors. The precursors may react with a surfaceseparately and one at a time in a sequential and self-limiting process(e.g., the amount of material deposited in each cycle or sequence isconstant regardless of precursor exposure so long as the precursorexposure is sufficient to saturate the reactive surface sites). Theinsulating layers and the doping layers of the charge drain coating mayuse different combinations of at least two chemicals. By exposing theprecursors to the surface repeatedly, the insulating layers and thedoping layers of the charge drain coating may be deposited.

As shown in FIG. 6, the method 600 may, at step 610, clean a substratesurface. For example, the surface of an electron-optical MEMS component(e.g., electron-optical MEMS component 100) may be cleaned. In someembodiments, such cleaning may also clean the sidewalls (e.g., sidewalls210 and 220) of a lenslet (e.g., lenslet 110). The cleaning of thesubstrate surface may be performed ultrasonically in acetone for aperiod of time (e.g., five minutes), following by flushing withultrahigh purity nitrogen at 20 psi for another period of time (e.g., 30seconds). An alternative method of cleaning is by exposing the surfaceof the electron-optical MEMS component 100 to ozone for a few minutes toa few hours. Next, at step 620, a desired resistivity for the coating tobe deposited on the sidewalls of the lenslets may be determined. Forexample, a resistivity for the charge drain coating may be determined.Next, at step 630, the insulating layer may be deposited based on thedesired resistivity. In some embodiments, the insulating layer may be analuminum oxide (Al₂O₃) material. Such an aluminum oxide layer may bedeposited in the atomic layer deposition process with alternatingexposures to two precursors. For example, a first precursor oftrimethylaluminum (TMA) and a second precursor of H₂O may be used. Insuch an atomic layer deposition process, the first precursor oftrimethylaluminum may be introduced in a process chamber and then theprocess chamber may be purged or evacuated to remove any of the firstprecursor that has not reacted as well as any gaseous byproducts. Next,the second precursor of H₂O may be introduced in the process chamber toengage in a reaction with the first precursor. Subsequently, the processchamber may be purged or evacuated to remove any of the second precursorthat has not reacted as well as any gaseous byproducts remaining in theprocess chamber.

Furthermore, at step 640, the doping layer (e.g. the nanocluster layer)may be deposited based on the desired resistivity. In some embodiments,the doping layer may be a molybdenum suboxide (MoO_(3-x)) material,where 0<x≦1. Such a molybdenum suboxide layer may also be deposited bythe atomic layer deposition process with alternating exposures to twofurther precursors. For example, a third precursor of Si₂H₆ and a fourthprecursor of MoF₆ may be used. In such an atomic layer depositionprocess, the first precursor of Si₂H₆ may be introduced in a processchamber and then the process chamber may be purged or evacuated toremove any of the third precursor that has not reacted as well as anygaseous byproducts. Next, the fourth precursor of MoF₆ may be introducedinto the process chamber to engage in a reaction with the thirdprecursor. Subsequently, the process chamber may be purged or evacuatedto remove any of the fourth precursor that has not reacted as well asany gaseous byproducts remaining in the process chamber. In someembodiments, the Si₂H₆ may serve to reduce the absorbed MoF₆ to metallicmolybdenum (Mo). Furthermore, the molybdenum may coalesce intonanoclusters as previously disclosed and may become partially oxidizedto form the molybdenum suboxide nanoclusters.

At step 650, the method 600 may alternate between the depositing of theinsulating layers (e.g., as described with relation to step 630) and thedoping layers (e.g., as described with relation to step 640). In someembodiments, the alternating of the layers may be based on the desiredthickness of the charge drain coating as well as the desired resistivityof the charge drain coating. For example, the resistivity may be tunedor configured based on the layers that are deposited in the atomic layerdeposition process. As such, the resistivity of the charge drain coatingmay be based on the composition (e.g., the ratio of the insulating anddoping layers) of the charge drain coating itself. Since each of thelayers is controlled in the atomic layer deposition process, theresistivity of the charge drain coating may be controlled by adjustingthe precursor ratio of the insulating components and the dopingcomponents in the charge drain coating. In some embodiments, theprecursor ratio may be defined as % C═C/(I+C)×100%, where C is thenumber of doping layer (e.g., Mo) atomic layer deposition cycles thathave been performed while depositing the charge drain coating and I isthe number of insulating layer (e.g., Al₂O₃) atomic layer depositioncycles performed while depositing the charge drain coating. Finally, atstep 660, the method 600 may remove the charge drain coating from bondpads of an electron-optical MEMS component. For example, the bond padsof the electron-optical MEMS component may be exposed while the lensletswith the deposited charge drain coating may be covered and the chargedrain coating that has been deposited on the bond pads may be removed(e.g., etched). Furthermore, in some embodiments, a thermal annealingprocess may also be performed after the depositing of the charge draincoating to the sidewalls of the lenslets.

As such, an atomic layer deposition process may be used to uniformlyapply a charge drain coating to an electron-optical MEMS component. Thecharge drain coating may be applied in the atomic layer depositionprocess by alternating exposures of a first group of precursors to forman insulating layer and then alternating exposures of a second group ofprecursors to form a doping layer. In some embodiments, the atomic layerdeposition process may deposit the insulating layers and doping layersin order to achieve a desired resistivity. For example, in someembodiments, the atomic layer deposition process may be used to achievea precursor ratio of 10% doping layers. In such a circumstance, theatomic layer deposition process may be used to deposit or form nineinsulating layers (e.g., Al₂O₃) and then a single doping layer (e.g.,MoO_(3-x)). The atomic layer deposition may again be used to depositanother nine insulating layers and then another doping layer. Suchprocess may be repeated until a desired thickness of the charge draincoating has been achieved. However, in some embodiments, the top andbottom layers of the charge drain coating must be an insulating layer.Thus, a charge drain coating may be created such that it first includesnine insulating layers, then one doping layer, then another nineinsulating layers, another doping layer, and at least one additionalinsulating layer. Although specific numbers of insulating and dopinglayers are described, any number of insulating layers and doping layersmay be used. For example, the number of insulating layers and dopinglayers may vary based on the desired resistivity and the desiredthickness of the charge drain coating.

In some embodiments, the resistivity of the charge drain coating may bedecreased as the precursor ratio increases. In other words, as more ofthe doping layers are used in the charge drain coating, the conductivityof the charge drain coating material itself also increases. In someembodiments, the resistivity may drop exponentially with respect to theprecursor ratio.

In some embodiments, the insulating and doping layers are deposited inthe same process chamber while under similar process conditions. Forexample, the deposition temperature for the deposition of the insulatinglayers and doping layers may be identical, thereby simplifying the taskof separately depositing the insulting layers and the doping layers toform the charge drain coating. Furthermore, the ALD process may be atechnique for growing complex layers in a precisely controlled mannerwith several unique advantages. Such advantages may be that the ALDprocess is based on a binary sequence of self-limiting chemicalreactions between precursor vapors and a solid surface. Since the tworeactions in the binary sequence may be separately performed, the gasphase precursors may not be mixed and thus this may eliminate anypossibility of gas phase reactions that can form particulatecontaminants that cause non-self-limiting chemical vapor deposition. Theself-limiting aspect of the ALD process may lead to continuouspinhole-free films for the charge drain coating, improved step coverage,and uniform deposition on high aspect ratio structures (i.e., uniformdeposition on the sidewalls of the lenslets). The ALD process may alsobe extended to large area substrates and batch processing of multiplesubstrates. Furthermore, since the thickness of the deposited layersdepends on the number of reaction cycles, the thickness of each of theinsulating layers and doping layers may be precisely controlled.

As previously disclosed, aluminum oxide may be chosen as the matrixmaterial (e.g., insulating layers) because it has a very high dielectricstrength of 1 GV/m in the bulk and up to 3 GV/m in thin films as thethickness approaches 1 nm. Aluminum oxide atomic layer deposition (asdiscussed in further detail below) with trimethyl aluminum (TMA) and H₂Ois a well understood process that may be accomplished over a broadtemperature range, uses volatile precursors, and exhibits excellentself-limiting behavior. Similarly, molybdenum atomic layer deposition(ALD) involving Si₂H₆ and MoF₆ is a favorable process that may also beaccomplished over a wide range of temperatures, utilizes high vaporpressure precursors, and provides a high growth per cycle. By blendingthe Al₂O₃ and Mo ALD processes on the sub-nanometer scale, theresistivity of the resulting material (e.g., charge drain coating) maybe adjusted over a broad range of values. Both processes may be amenableto future scale-up and commercialization.

As previously disclosed, prior to deposition, the substrates may becleaned ultrasonically in acetone for five minutes followed by flushingwith ultrahigh purity (99.999%) nitrogen at 20 psi for 30 seconds. TheAl₂O₃ ALD may be performed with alternating exposures to TMA and H₂O.The Mo ALD may be performed using alternating exposures to Si₂H₆ andMoF₆, where Si₂H₆ may serve to reduce the adsorbed MoF₆ to metallic Mo.All precursors were maintained at room temperature. The TMA and H₂O maybe held in steel reservoirs while the Si₂H₆ and MoF₆ may be held incompressed gas lecture bottles with pressure regulators. The films maybe deposited at a temperature of 200 degrees Celsius. The mesoscaleresistivity films may be prepared by alternating between the Al₂O₃andthe Mo ALD processes. The composition, and hence resistivity, of thefilm may be controlled by adjusting the precursor ratio of insulatingand doping components in the film, as previously disclosed. In someembodiments, the thicknesses of the films may be between 20 and 100 nm.To facilitate sheet resistance measurements, the ALD films may bedeposited on coupons with gold “comb structures” which areinter-digitated electrodes that provide a large number of squares formeasuring the sheet resistance of highly insulating films. Theneighboring combs may have a 2 micrometer gap so that the comb structurehas the equivalence of 1/100,000 square. The long-term dielectricstrength measurements may be made with an apparatus including apicoammeter and a programmable power supply interfaced to a PC. Thecoupons may be wire bonded and the tests may be carried out in a vacuumof 10⁻³ torr to simulate an example operating environment of an exampleelectron-optical MEMS and in air to observe the effects of oxygen andwater. The typical bias applied across the combs may be 50 V, whichcorresponds to an electric field of 25 MV/m. The temperature-dependentcurrent-voltage (IV) measurements may be made on a probe station in airwith a temperature-controlled heater. The thermocouple sensor may belocated approximately 5 mm from the measurement location. All electricalmeasurements may be performed in plane and with two-points because thefilms' high resistance (e.g., 100 mega-ohms) may dominate over thecontact and line resistance.

FIG. 6B illustrates the sheet resistance of a 40 nm film 662 (i.e.,charge drain coating) prepared with a precursor ratio of 8% Mo held at25 MV/m in comparison with that of a homogeneous film of two oxides 661.While the resistivity of the homogeneous film 661 dropped by over 3orders of magnitude in less than 40 hours, the MoO_(3-x)/Al₂O₃ chargedrain coating film 662 resistivity remained nearly constant (e.g., lessthan a 3% drop) over 87 hours of testing. At this rate, the timerequired for the resistance of our film to drop by half is estimated tobe three months, which exceeds the need for a typical REBL use orapplication. FIG. 6C illustrates the resistivity of the MoO_(3-x)/Al₂O₃charge drain coating film as a function of percentage of Mo (e.g.,Mo-based layers) on a semi logarithmic scale. As shown, data forms astraight line, indicating that the resistivity drops exponentially withrelation to the Mo percentage in the charge drain coating. This is anindication that the MoO_(3-x) layers do not form continuous sheets (andinstead forms the nanoclusters as previously described), as this wouldhave resulted in a first order reciprocal relationship between Mopercentage and resistivity.

FIG. 6D illustrates a key difference between the MoO_(3-x)/Al₂O₃ chargedrain coating film and the homogeneous film of two oxides. The latter isamorphous and single phase, so the film may be featureless. In contrast,the MoO_(3-x)/Al₂O₃ charge drain coating film may be segregated intophases with MoO_(3-x) appearing darker than Al₂O₃ because ofmolybdenum's higher electron scattering cross section. Instead offorming a continuous film, the Mo has coalesced into the previouslydiscussed nanoclusters of about one to three nanometers (nm). In someembodiments, such coalescing may be due to metals tending to have highersurface energies than oxides and tending to form islands (e.g.,nanoclusters) on oxide surfaces. Separately, all Mo species are in a mixof +4 and +6 oxidation states and none in the metallic state. However,in some embodiments, some of the Mo species may exist in the metallicstate. In some embodiments, the metal islands may first be formed andsubsequently oxidized to MoO_(3-x), for example by the H₂O exposures.MoO_(3-x) is a conductive oxide due to oxygen vacancy defects. Aluminumoxide, on the other hand, is a high-band gap insulator with deep oxygenvacancy defect states two electron-volts (eV) below the conduction band;these defect states are too deep to provide free carriers the aluminumoxide at room temperature. Consequently, the MoO_(3-x) nanoclusters maybe responsible for providing free carriers to the composite films.Moreover, Al₂O₃ has one of the highest dielectric strengths among allnaturally occurring materials (34 MV/m) and may be responsible for thehigh dielectric strength of the composite films.

Further electrical tests illustrate the previously disclosed mechanismbehind the electrical properties of the charge drain coating films. FIG.6E shows IV curves for a series of MoO_(3-x)/Al₂O₃ charge drain coatingfilms with thicknesses ranging from 37 nm to 90 nm and prepared with 8%Mo (e.g., precursor ratio). These IV curves are plotted as J/E vs. √E ona semi-log scale and J vs. E on a log-log scale. The data plotted on thesemi log scale form straight lines at higher electric fields and thedata on the log-log scale show no second order dependence on E. Suchdata indicates that FP emission, not Space-Charge Limited (SCL)emission, is the dominant conduction mechanism in the MoO_(3-x)/Al₂O₃charge drain coating films. The difference in slope values at high E maybe due to surface and interfacial effects which dominate the thinnerfilms. Using equations for the FP effect, the calculated effectivedopant barrier height by plotting the ln(J/E) vs. 1/T for different E,as shown in FIG. 8A. The slope of the curve as plotted in the right IVcurve as shown in FIG. 8B is the effective barrier height, which at alow field electric field is approximately 0.32 eV, and at a highelectric field is lowered to below 0.29 eV. Such data corresponds to theionization energy of oxygen vacancies in MoO_(3-x) of 0.27 eV. However,the ionization energy varies as a function of x. For example, pure MoO₂is semi-metallic as its valence band is only partly filled. Theconductivity of the MoO_(3-x)/Al₂O₃ charge drain coating films may thusbe customized because the precursor ratio is precisely and reproduciblycontrolled in the ALD process and the conductivity remains stablebecause the Al₂O₃ matrix or layers are sufficiently robust to protectthe MoO-based nanoclusters from oxidation and/or reduction under astrong or high electric field.

Thus, the overall picture of the electrical transport mechanism for theMo nanoclusters embedded in an amorphous Al₂O₃ matrix of layers hasemerged as follows. The fundamental electrical transport mechanism is FPemission with the oxygen vacancies in the MoO_(3-x) nanoclusters servingas dopants to the Al₂O₃ matrix of layers. At lower electric fields, theionization energy of these carriers to the Al₂O₃ conduction band may be0.32 eV. The Al₂O₃ matrix of layers also serves to protect the MoO_(3-x)from further oxidation and reduction, maintaining the carrier density inthe charge drain coating under a strong or high electric field. Incharge drain coating films which have a higher MoO_(3-x) content (e.g.,higher precursor ratio), the neighboring layers of nanoclusters may becloser together. The shorter inter-cluster distance may cause thepotential between neighboring defect sites to merge and effectivelylower the barrier between neighboring nanoclusters as illustrated inFIG. 6F.

The MoO_(3-x)/Al₂O₃ charge drain coating films prove effective indraining charge from an electron-optical MEMS device. For example, a 14nm layer of the MoO_(3-x)/Al₂O₃ charge drain coating film with 10% Moprecursor ratio may be applied to the electron-optical MEMS device andsuch application has resulted in a significant performance improvement.FIG. 6G illustrates the images from the electron-optical MEMS devicecoated with a homogeneous film of two oxides and alternatively theelectron-optical MEMS device coated with the MoO_(3-x)/Al₂O₃ chargedrain coating film. With the MoO_(3-x)/Al₂O₃ charge drain coating films,the efficiency of the electron-optical MEMS device increased from 40% to60% and the contrast improved from 10:1 to 50:1 when compared to theelectron-optical MEMS device coated with the homogeneous film of twooxides. Furthermore, the lifetime of the electron-optical MEMS deviceimproved by orders of magnitude (e.g., from a few days to three months

FIG. 7A illustrates an example electron-optical MEMS device 700 afterthe atomic layer deposition process has deposited a charge draincoating. In general, the electron-optical MEMS device 700 may be adigital pattern generator including lenslets that are integrated with acomplementary metal-oxide-semiconductor (CMOS) circuit. Theelectron-optical MEMS device 700 may be in a process chamber where theatomic layer deposition process may deposit uniform layers upon allsurface areas of the electron-optical MEMS device 700.

As shown in FIG. 7A, the electron-optical MEMS device 700 may be a DPGwith lenslets 110, 120, and 130. In some embodiments, the DPG mayinclude a 248×4096 array of lenslets. Furthermore, the lenslets may becylindrical holes or wells through the electrode and insulating layersof the electron-optical MEMS device (e.g., the layers 130, 131, 132,133, 140, 141, 142, 143, and 144). The electron-optical MEMS device 700may also include bond pads 720 and 730. In some embodiments, the bondpads may be coupled or connected to electrodes for each of the lensletsand/or the CMOS circuitry. As such, the electron-optical MEMS device 700may include a CMOS bond pad (e.g., bond pad 720) and an electrode bondpad (e.g., bond pad 730). In some embodiments, the electron-optical MEMSdevice 700 may be subject to an atomic layer deposition process asearlier disclosed. For example, the atomic layer deposition process mayuniformly deposit multiple layers of materials to form a charge draincoating 710. As shown, the charge drain coating 710 may cover thesidewalls and bottoms of the lenslets (e.g., lenslets 110, 120, and130), as well as other surfaces of the electron-optical MEMS device 700,such as the bond pads 720 and 730.

FIG. 7B illustrates an electron-optical MEMS device 750 after portionsof the deposited charge drain coating have been removed. In general, theelectron-optical MEMS device 750 may be subject to an etching or otherprocess to remove the charge drain coating from bond pads or othercomponents of the electron-optical MEMS device. The electron-opticalMEMS device may be in a process chamber where the portions of the chargedrain coating deposited upon the electron-optical MEMS device may beremoved.

As shown in FIG. 7B, portions of the charge drain coating 710 may beremoved from the surfaces of the bond pads 720 and 730. In the same oralternative embodiments, the charge drain coating 710 may also beremoved from the bottom of the lenslets. However, the charge draincoating 710 covering the sidewalls of the lenslets may remain intact. Insome embodiments, the portions of the charge drain coating 710 over thebond pads 720 and 730 and other such components may be removed byetching such as an ion etching process or an argon etching process. Assuch, portions of the charge drain coating 710 may be removed and otherportions of the charge drain coating 710 may remain intact.

In some embodiments, the charge drain coating as disclosed herein mayfurther be used in other REBL applications. For example, ceramiccomponents of an electron gun may be covered by the charge draincoating. Sharp points in the electron gun or column ceramics may lead toarcing. However, covering such sharp points in the ceramic material withthe charge drain coating may be smoothed, thus reducing the arcing andprovide better use in the REBL tool.

In the description above and throughout, numerous specific details areset forth in order to provide a thorough understanding of an embodimentof this disclosure. It will be evident, however, to one of ordinaryskill in the art, that an embodiment may be practiced without thesespecific details. In other instances, well-known structures and devicesare shown in block diagram form to facilitate explanation. Thedescription of the preferred embodiments is not intended to limit thescope of the claims appended hereto. Further, in the method disclosedherein, various steps are disclosed illustrating some of the functionsof an embodiment. These steps are merely examples, and are not meant tobe limiting in any way. Other steps and functions may be contemplatedwithout departing from this disclosure or the scope of an embodiment.

What is claimed is:
 1. A micro-electromechanical systems (MEMS) deviceto receive an electron beam in an electron-beam lithography chamber, theMEMS device comprising: a plurality of lenslets to receive electronsfrom the electron beam, each of the lenslets are configured to eithertransmit or not to transmit, or to reflect or not to reflect, at leastsome of the electrons from the electron beam; and a charge drain coatingon at least some of the inner surfaces of each of the lenslets to drainany of the electrons that have become embedded into the charge draincoating, the charge drain coating includes insulating material and atleast one doping material embedded within the insulating material, thedoping material includes at least one nanocluster.
 2. The MEMS device ofclaim 1, wherein the inner surfaces includes the sidewalls of thelenslets.
 3. The MEMS device of claim 1, wherein the MEMS device is usedfor reflective electron beam lithography (REBL).
 4. The MEMS device ofclaim 1, wherein the MEMS device is a digital pattern generator (DPG)with an array of the lenslets.
 5. The MEMS device of claim 4, whereineach of the lenslets are holes in the substrate of the MEMS device, eachof the lenslets are selectively configured to transmit or not totransmit, or to reflect or not to reflect, at least some of theelectrons.
 6. The MEMS device of claim 1, wherein the charge draincoating includes a plurality of layers of the insulating material and aplurality of layers of the doping material, the doping layers includeclusters of the doping material.
 7. The MEMS device of claim 1, whereinthe insulating material is at least one of aluminum oxide (Al₂O₃) andsilicon oxide (SiO₂) and the doping material is a metal or a metaloxide, carbide, nitride, or elemental form of at least one of molybdenum(Mo), tungsten (W), titanium (Ti), hafnium (Hf), tantalum (Ta), niobium(Nb), platinum (Pt), palladium (Pd), ruthenium (Ru), or iridium (Ir). 8.A method to deposit a charge drain coating on an electron-optical MEMSdevice in a process chamber, the electron-optical device includes aplurality of lenslets, each lenslet is used to selectively manipulate anelectron, the method comprising: depositing one or more insulatinglayers on the electron-optical device; depositing one or more dopinglayers on the first insulating layers on the electron-optical device;and alternating between depositing one or more additional insulatinglayers and one or more additional doping layers based on a desiredresistivity for the charge drain coating on the electron-optical MEMSdevice.
 9. The method of claim 8, wherein the depositing of theinsulating layers and the doping layers is performed by atomic layerdeposition (ALD).
 10. The method of claim 9, wherein the depositing ofthe insulating layers involves the use of a first precursor and a secondprecursor, the depositing of the one or more doping layers includes athird precursor and a fourth precursor, at least one of the first andsecond precursors is different than at least one of the third and fourthprecursors.
 11. The method of claim 8, wherein the insulating layersincludes one of aluminum oxide (Al₂O₃) and silicon dioxide (SiO₂) andthe doping layers includes a metal or an oxide, carbide, nitride, orelemental form of at least one of molybdenum (Mo), tungsten (W),titanium (Ti), hafnium (Hf), tantalum (Ta), niobium (Nb), platinum (Pt),palladium (Pd), ruthenium (Ru), or iridium (Ir).
 12. The method of claim8, wherein a ratio of the number of doping layers relative to the numberof insulating layers determines the resistivity of the charge draincoating, the depositing of the insulating layers and at least one dopinglayer is based on the ratio.
 13. The method of claim 8, wherein thecharge drain coating is deposited on sidewalls of the lenslets.
 14. Asystem comprising: an electron beam emitter configured to produce anelectron beam; and a digital pattern generator (DPG) to be illuminatedby the electron beam from the electron beam emitter, the DPG comprising:a plurality of lenslets to receive electrons from the electron beam andto either absorb or reflect at least some of the electrons from theelectron beam; and a coating on the sidewalls of each of the lenslets todrain any of the electrons that come into contact with the coating, thecoating includes insulating material and at least one doping materialembedded within the insulating material.
 15. The system of claim 14,wherein the doping material includes at least one cluster of dopingmaterial that is a metal or a metal oxide, carbide, nitride, orelemental form of at least one of molybdenum (Mo), tungsten (W),titanium (Ti), hafnium (Hf), tantalum (Ta), niobium (Nb), platinum (Pt),palladium (Pd), ruthenium (Ru), or iridium (Ir).
 16. The system of claim14, wherein the system is used for reflective electron beam lithography(REBL).
 17. The system of claim 14, wherein each of the lenslets areholes in the DPG, each of the lenslets are selectively configured toeither absorb or reflect at least some of the electrons.
 18. The systemof claim 14, wherein the insulating material has a high dielectricstrength and the doping material is an oxide, carbide, nitride, orelemental form of a metal
 19. The system of claim 14, wherein theinsulating material is composed of aluminum oxide and the dopingmaterial is composed of molybdenum suboxide (MoO_(3-x)) material, where0<x≦1.
 20. The system of claim 14, wherein the insulating material has ahigh dielectric strength.